Leakage Immune 9T-SRAM Cell in Sub-threshold Region
نویسندگان
چکیده
منابع مشابه
A Sub-threshold 9T SRAM Cell with High Write and Read ability with Bit Interleaving Capability
This paper proposes a new sub-threshold low power 9T static random-access memory (SRAM) cell compatible with bit interleaving structure in which the effective sizing adjustment of access transistors in write mode is provided by isolating writing and reading paths. In the proposed cell, we consider a weak inverter to make better write mode operation. Moreover applying boosted word line feature ...
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ژورنال
عنوان ژورنال: Bulletin of Electrical Engineering and Informatics
سال: 2016
ISSN: 2302-9285,2089-3191
DOI: 10.11591/eei.v5i1.557